Negative dynamic mobility of electrons in silicon in the far-infrared range
1997
Abstract
We performed Monte Carlo simulation of electron response to a strong pumping wave (443 GHz) and weak signal harmonic waves (886 and 1329 GHz) in silicon. A negative dynamic conductivity is found to arise for 1329 GHz above a threshold value of the pumping wave amplitude and below a maximum value of the signal wave amplitude in a limited range of phase difference between the waves.
Details
Title
Negative dynamic mobility of electrons in silicon in the far-infrared range
Author(s)
Brazis, R. ; Asadauskas, L. ; Raguotis, R. ; Siegrist, M. R.
Published in
International Journal of Infrared and Millimeter Waves
Volume
18
Issue
6
Pages
1217-1222
Date
1997
ISSN
0195-9271
Laboratories
CRPP
SPC
SPC
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SPC - Swiss Plasma Center > SPC - Swiss Plasma Center
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2008-04-16