000119494 001__ 119494
000119494 005__ 20190102122019.0
000119494 0247_ $$2doi$$a10.1016/0022-3093(96)00181-0
000119494 022__ $$a0022-3093
000119494 02470 $$2ISI$$aA1996UX34500141
000119494 037__ $$aARTICLE
000119494 245__ $$aOn the a-Si:H film growth: The role of the powder formation
000119494 260__ $$c1996
000119494 269__ $$a1996
000119494 336__ $$aJournal Articles
000119494 500__ $$aPart 2
000119494 520__ $$aResults are presented which are geared towards an understanding of the influence of powder formation during film growth. Plasma chemistry is correlated with the morphology, structure (inferred through infrared spectroscopy, scanning electron microscopy and X-ray diffraction) electro-optical and density of states of intrinsic films deposited under continuous and power modulated operation. Results show that for modulation frequencies where no powder formation occurs and low substrate temperatures T (150 degrees C), silane decomposition gives rise to the growth of inhomogeneous films while in the high modulation frequency regime, at the same temperature, the anions and powder are trapped resulting in films with high deposition rates and low defect density.
000119494 700__ $$aMacarico, A.
000119494 700__ $$aVieira, M.
000119494 700__ $$aFantoni, A.
000119494 700__ $$aLouro, P.
000119494 700__ $$aSeco, A.
000119494 700__ $$aMartins, R.
000119494 700__ $$0240129$$aHollenstein, C.$$g105413
000119494 773__ $$j200$$q1207-1211$$tJournal of Non-Crystalline Solids
000119494 909C0 $$pCRPP
000119494 909C0 $$0252028$$pSPC
000119494 909CO $$ooai:infoscience.tind.io:119494$$pSB$$particle
000119494 937__ $$aCRPP-ARTICLE-1996-018
000119494 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000119494 980__ $$aARTICLE