a-Si:H films were prepared using pure silane in the temperature range from 200 degrees C up to 400 degrees C by the very high frequency glow discharge (VHF-GD) technique. During deposition a He/Ne laser beam directed across the discharge monitored powder formation. H-content and microstructure were determined by IR-spectroscopy. The impurity contents of oxygen (O), nitrogen (N) and carbon (C) were analysed by SIMS. A surface profiler was used to measure the internal stress and thickness of the films. The samples were further characterised by dark- and photo-conductivity and by PDS-measurements, both in annealed and light-soaked states. Finally, we will show how far changes in film properties affect light-induced degradation and the saturated defect density.