Defects Structure and Chemistry of InP-GaAs Interfaces Obtained by Wafer Bonding


Published in:
J. Appl. Phys., 87, 4135-4146
Year:
2000
Other identifiers:
Laboratories:




 Record created 2008-02-29, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)