Thermal Stability of InP-Based Structures for Wafer Fused Laser Diodes
Syrbu, A.V.; Behrend, J.; Fernandez, J.; Carlin, J.F.; Berseth, C.-A.; Iakovlev, V.P.; Rudra, A.; Kapon, E.
1998

Abstract

Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatures 600-650 degrees C which prevents lasing of these structures fused on GaAs substrates. It is shown that the degradation of luminescence characteristics can be decreased by increasing the growth temperature to 480 degrees C and V/III ratio to 4. InAsP/InGaAsP and InGaAs/InGaAsP laser diodes on GaAs substrates have been obtained by localized wafer fusion at 650 degrees C.

Details

Title Thermal Stability of InP-Based Structures for Wafer Fused Laser Diodes
Author(s) Syrbu, A.V. ; Behrend, J. ; Fernandez, J. ; Carlin, J.F. ; Berseth, C.-A. ; Iakovlev, V.P. ; Rudra, A. ; Kapon, E.
Published in Journal of Crystal Growth
Volume 188
Issue 1-4
Pages 338-342
Date 1998
Keywords
DOI https://doi.org/10.1016/S0022-0248(98)00075-X
Other identifier(s) View record in Web of Science
Laboratories LASPE
LPN
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPN - Laboratory of the Physics of Nanostructures
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2008-02-29

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