Thermal Stability of InP-Based Structures for Wafer Fused Laser Diodes

Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatures 600-650 degrees C which prevents lasing of these structures fused on GaAs substrates. It is shown that the degradation of luminescence characteristics can be decreased by increasing the growth temperature to 480 degrees C and V/III ratio to 4. InAsP/InGaAsP and InGaAs/InGaAsP laser diodes on GaAs substrates have been obtained by localized wafer fusion at 650 degrees C.


Published in:
Journal of Crystal Growth, 188, 1-4, 338-342
Year:
1998
Keywords:
Laboratories:




 Record created 2008-02-29, last modified 2018-03-18


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