000118007 001__ 118007
000118007 005__ 20181203021115.0
000118007 0247_ $$2doi$$a10.1016/S0022-0248(98)00084-0
000118007 022__ $$a0022-0248
000118007 02470 $$2ISI$$a000074386800046
000118007 037__ $$aARTICLE
000118007 245__ $$aInAsP/InGaAsP Periodic Gain Structure for 1.5µm Vertical Cavity Surface Emitting Laser Applications
000118007 260__ $$c1998
000118007 269__ $$a1998
000118007 336__ $$aJournal Articles
000118007 520__ $$aWe have studied the capabilities of chemical beam epitaxy (CBE) to produce high-gain media for long-wavelength (1.5 mu m) vertical cavity surface emitting lasers (VCSELs). Using a parameter pair of low growth temperature and small V/III ratio the integration of up to 15 highly strained (1.78%) InAsP quantum wells (QWs) into a periodic gain structure (PGS) is successfully demonstrated. In this work we present data of atomic force microscopy (AFM), X-ray diffraction, reflectivity and electro-luminescence measurements that prove the very good structural and optical quality of this CBE grown PGS. As an alternative to conventional multi quantum well(MQW) systems as active layers, a high-performance PGS may be used in a VCSEL structure to reduce the very strict requirements on the InP-based distributed Bragg reflectors (DBRs) or to increase the achievable output power. Due to the use of thickness-reduced InP-based DBRs in conjunction with a PGS as the active region the fabrication of fully epitaxial grown long-wavelength VCSELs might also be possible with CBE. (C) 1998 Elsevier Science B.V. All rights reserved.
000118007 6531_ $$aInAsP
000118007 6531_ $$aAFM
000118007 6531_ $$aTEM
000118007 6531_ $$aCBE
000118007 6531_ $$aperiodic gain structure
000118007 6531_ $$aATOMIC-FORCE MICROSCOPY
000118007 6531_ $$aOPERATION
000118007 6531_ $$aAIR
000118007 700__ $$aBehrend, J.
000118007 700__ $$0240056$$aCarlin, J. F.$$g104706
000118007 700__ $$0242320$$aSirbu, A.V.$$g111197
000118007 700__ $$0241423$$aBerseth, C.A.$$g110570
000118007 700__ $$0240082$$aRudra, A.$$g106305
000118007 700__ $$0240239$$aKapon, E.$$g105530
000118007 773__ $$j188$$k1-4$$q295-299$$tJournal of Crystal Growth
000118007 909C0 $$0252035$$pLPN$$xU10158
000118007 909C0 $$0252312$$pLASPE$$xU10946
000118007 909CO $$ooai:infoscience.tind.io:118007$$pSB$$particle
000118007 937__ $$aLPN-ARTICLE-1998-001
000118007 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000118007 980__ $$aARTICLE