Characteristics of InAsP/InGaAsP Edge Emitting Laser Diodes Obtained by Localised Fusion on GaAs Substrates
1997
Abstract
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the disordering of quantum wells at fusion temperatures induced by point defects incorporated during low temperature growth.
Details
Title
Characteristics of InAsP/InGaAsP Edge Emitting Laser Diodes Obtained by Localised Fusion on GaAs Substrates
Author(s)
Syrbu, A.V. ; Fernandez, J. ; Behrend, J. ; Sagalowicz, L. ; Iakovlev, V.P. ; Carlin, J.F. ; Berseth, C.A. ; Rudra, A. ; Kapon, E.
Published in
Electronics Letters
Volume
33
Issue
23
Pages
1954-1955
Date
1997
Other identifier(s)
View record in Web of Science
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPN - Laboratory of the Physics of Nanostructures
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPN - Laboratory of the Physics of Nanostructures
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2008-02-29