Characteristics of InAsP/InGaAsP Edge Emitting Laser Diodes Obtained by Localised Fusion on GaAs Substrates

Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the disordering of quantum wells at fusion temperatures induced by point defects incorporated during low temperature growth.


Published in:
Electronics Letters, 33, 23, 1954-1955
Year:
1997
Keywords:
Laboratories:




 Record created 2008-02-29, last modified 2018-01-28


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