000115084 001__ 115084
000115084 005__ 20190316234111.0
000115084 0247_ $$2doi$$a10.1063/1.2828991
000115084 02470 $$2DAR$$a11953
000115084 02470 $$2ISI$$a000252284200075
000115084 037__ $$aARTICLE
000115084 245__ $$aCharge transport mechanisms in microcrystalline silicon
000115084 260__ $$c2008
000115084 269__ $$a2008
000115084 336__ $$aJournal Articles
000115084 520__ $$aA heterogeneous charge transport model for microcrystalline silicon based on fluctuation-induced tunneling is presented that fits the low-temperature saturation observed in dark conductivity measurements and accounts for the film microstructure. Excellent agreement is found when the model is applied to data reported in the literature, particularly for highly crystalline samples, which produce the highest performance transistors. Values obtained for the three fitting parameters are consistent with typical measurements of microcrystalline silicon film morphology and the conduction band offset between amorphous and crystalline silicons.
000115084 6531_ $$aElectronic transport and semiconductors
000115084 700__ $$aKonezny, S.J.
000115084 700__ $$0240426$$aBussac, M.N.$$g107298
000115084 700__ $$0240195$$aZuppiroli, L.$$g106787
000115084 773__ $$j92$$q012107-1 - 3$$tApplied Physics Letters
000115084 8564_ $$uhttp://link.aip.org/link/?APPLAB/92/012107/1$$zURL
000115084 909C0 $$0252073$$pLOMM$$xU10338
000115084 909CO $$ooai:infoscience.tind.io:115084$$particle$$qGLOBAL_SET
000115084 937__ $$aLOMM-ARTICLE-2008-006
000115084 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000115084 980__ $$aARTICLE