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Abstract

The transient and static behavior of an insulated gate bipolar transistor (IGBT) are analyzed through finite elements simulations and physically based equations. The standard model using a bipolar transistor driven by a MOSFET is abandoned for three partial voltage drops in series, each with its specific static and dynamic behavior. One voltage drop on the internal MOSFET, one on the base and one on the collector-base junction. It is found that the dynamic model can be drastically simplified by focusing on the equivalent electron density. This takes into account the most important phenomena related to the carrier mobilities, necessary for an accurate transient modeling. The specific behavior of the gate-collector capacitance in soft switching conditions is discussed.

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