Noise Modeling Methodologies in the Presence of Mobility Degradation and their Equivalence
2006
Details
Title
Noise Modeling Methodologies in the Presence of Mobility Degradation and their Equivalence
Author(s)
Roy, A. S. ; Enz, C. ; Sallese, J.-M.
Published in
IEEE Transactions on Electron Devices
Volume
53
Issue
2
Pages
348-355
Date
2006
Publisher
Institute of Electrical and Electronics Engineers
ISSN
0018-9383
Keywords
MOSFET; carrier mobility; equivalent circuits; semiconductor device models; semiconductor device noise; Klaassen-Prins approach; MOSFET compact modeling; classical Langevin approach; device noise; drain noise current; electric field; gate noise current; impedance field method; long channel MOST; mobility degradation; noise modeling; noise parameters; thermal noise; Induced gate noise
Other identifier(s)
DAR: 8068
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > EDLAB - Group of Electron Device Modeling and Technology
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSI2 - Integrated Systems Laboratory (STI/IC)
Scientific production and competences > STI - School of Engineering > STI Archives > LEG1 - Electronics Laboratory 1
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSI2 - Integrated Systems Laboratory (STI/IC)
Scientific production and competences > STI - School of Engineering > STI Archives > LEG1 - Electronics Laboratory 1
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2007-10-08