Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET's channels valid in all modes of operation
2004
Details
Title
Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET's channels valid in all modes of operation
Author(s)
Sallese, Jean-Michel ; Krummenacher, François ; Fazan, Pierre
Published in
Solid-State Electronics
Volume
48
Issue
9
Pages
1539-1548
Date
2004
Other identifier(s)
View record in Web of Science
DAR: 5348
DOI: https://doi.org/10.1016/j.sse.2004.02.017
DAR: 5348
DOI: https://doi.org/10.1016/j.sse.2004.02.017
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > EDLAB - Group of Electron Device Modeling and Technology
Scientific production and competences > STI - School of Engineering > STI Archives > LEG1 - Electronics Laboratory 1
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > STI - School of Engineering > STI Archives > LEG1 - Electronics Laboratory 1
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2007-10-08