Oscillatory behaviour in the nonlinear emission of semiconductor microcavities

We have observed marked oscillations in the time-resolved photoluminescence of a semiconductor microcavity under non-resonant excitation conditions. Hot excitons, created with an ultrashort light pulse, rapidly relax into polaritons in the cavity with a large in-plane momentum K. Shortly after illumination, above a certain excitation power, the polaritons accumulate into an energy trap at the bottom of the dispersion and the light emission, governed by final-state stimulated scattering, starts at K similar to 0 (0degrees with respect to the normal of the sample). The angular dependence of the photoluminescence at negative detunings reveals that the emission is rapidly transferred to K similar to 2 x 10(4) cm(-1) (similar to15degrees), close to the point of inflection of the lower polariton branch, giving rise to an annular emission. The oscillations arise from a macroscopic coherent population in the lower polariton branch.


Published in:
Semiconductor Science and Technology, 19, 4, S333-S335
Year:
2004
ISSN:
0268-1242
Keywords:
Note:
Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain. Univ Grenoble 1, F-38042 Grenoble, France. CNRS, Spectrometrie Phys Lab, F-38042 Grenoble, France. Ecole Polytech Fed Lausanne, Dept Phys, CH-1015 Lausanne, Switzerland. Vina, L, Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain. luis.vina@uam.es
ISI Document Delivery No.: 812TB
Times Cited: 0
Cited Reference Count: 16
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 Record created 2007-08-31, last modified 2018-03-17


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