Electroluminescence and photoluminescence excitation study of asymmetric coupled GaAs/AlxGa1-xAs V-groove quantum wires

We have studied systems of asymmetric coupled GaAs V-groove quantum wires p-i-n diodes, in which the electrons and holes are injected into different wires. Despite the use of a 7 nm thick AlGaAs tunnel barrier, and although we demonstrate that holes tunnel more slowly than electrons, we observe a very efficient and fast tunneling between the quantum wires (QWR's). We attribute this to the achievement of a resonance between hole levels in the two QWR's. Photoluminescence excitation experiments are compared with accurate calculations of the excitonic absorption yielding a level of carrier transfer of nearly 100%. Temperature-dependent electroluminescence exhibits clear effects of tunneling up to room temperature but cannot distinguish separate electron/hole tunneling from exciton tunneling.


Published in:
Physical Review B, 70, 4
Year:
2004
ISSN:
1098-0121
Keywords:
Note:
Swiss Fed Inst Technol, Inst Quantum Elect & Photon, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland. Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden. Karlsson, KF, Swiss Fed Inst Technol, Inst Quantum Elect & Photon, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland. freka@ifm.liu.se
ISI Document Delivery No.: 843CO
Times Cited: 2
Cited Reference Count: 16
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045302
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 Record created 2007-08-31, last modified 2018-01-28


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