Infoscience

Journal article

Photoluminescence of p-doped quantum wells with strong spin splitting

Photoluminescence of p-type modulation doped (Cd,Mn)Te quantum wells is studied with carrier density up to 5 X 10(11) cm(-2) at various spin splittings. This splitting can be made larger than the characteristic energies of the system thanks to the giant Zeeman effect. At small spin splitting and regardless of the carrier density, the photoluminescence exhibits a single line, which corresponds to the charged exciton in the singlet state. Above a certain spin splitting, the charged exciton is destabilized in favor of the exciton at vanishing hole density, and in favor of a double line at higher carrier density. It is found here that the charged exciton destabilization energy hardly depends on the carrier density. The double line is found to be band-to-band like, with the same initial state - where the holes have the same spin orientation - and final states that differ by some excitation of the 2D hole gas. In addition, the spin splitting needed to fully polarize the hole gas is twice smaller than expected from the single particle image and gives a unique insight into many-body effects in the hole gas.

    Keywords: NEGATIVELY CHARGED EXCITONS ; 2-DIMENSIONAL ELECTRON-GAS ; MAGNETOOPTICAL ; ABSORPTION ; CDTE ; SEMICONDUCTORS ; TRIONS ; DENSITIES ; STATES

    Note:

    Univ Grenoble 1, CNRS CEA, Spectrometrie Phys Lab, Nanophys & Semicond Grp, F-38402 St Martin Dheres, France. Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland. Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland. CNRS, Lab Louis Neel, F-38042 Grenoble 9, France. Boukari, H, IMEC, MCP, ART, Kapeldreef 75, B-3001 Louvain, Belgium.

    ISI Document Delivery No.: 865EO

    Times Cited: 0

    Cited Reference Count: 41

    Cited References:

    ANDO T, 1982, REV MOD PHYS, V54, P437

    ASTAKHOV GV, 2002, PHYS REV B, V65

    ASTAKHOV GV, 2002, PHYS REV B, V65

    BOUKARI H, 2002, PHYS REV LETT, V88

    CIULIN V, 2000, PHYS REV B, V62, P16310

    CIULIN V, 2002, PHYS STATUS SOLIDI B, V229, P627

    COLE BE, 1998, PHYSICA B, V249, P607

    CROOKER SA, 2000, PHYS REV B, V61, P16307

    DANG LS, 1982, SOLID STATE COMMUN, V44, P1187

    DIETL T, 1997, PHYS REV B, V55, P3347

    ESSER A, 2000, PHYS REV B, V62, P8232

    ESSER A, 2001, PHYS STATUS SOLIDI B, V227, P317

    FINKELSTEIN G, 1998, PHYS REV B, V58, P12367

    FISHMAN G, 1995, PHYS REV B, V52, P11132

    HOMBURG O, 2000, PHYS REV B, V62, P7413

    HUARD V, 2000, PHYS REV LETT, V84, P187

    HUARD V, 2000, PHYS STATUS SOLIDI A, V178, P95

    JUNGWIRTH T, 2001, PHYSICA E, V10, P153

    KHENG K, 1993, PHYS REV LETT, V71, P1752

    KHENG K, 1995, ANN PHYS, V20, C2

    KOSSACKI P, 1999, PHYS REV B, V60, P16018

    KOSSACKI P, 2001, P INT C PHYS SEM OS, P623

    KOSSACKI P, 2002, PHYS STATUS SOLIDI B, V229, P659

    KOSSACKI P, 2004, CONDMAT0404490

    KUTROWSKI M, 2002, PHYS STATUS SOLIDI B, V229, P791

    LAMPERT MA, 1958, PHYS REV LETT, V1, P450

    LOVISA S, 1997, PHYS REV B, V56

    MASLANA W, 2003, APPL PHYS LETT, V82, P1875

    PLANEL R, 1980, J PHYS-PARIS, V41, C5

    REDLINSKI P, 2001, SOLID STATE COMMUN, V118, P295

    RIVA C, 2000, PHYS REV B, V61, P13873

    RIVA C, 2001, PHYS REV B, V63

    SANVITTO D, 2002, PHYS REV LETT, V89

    SHIELDS AJ, 1995, PHYS REV B, V52, P5523

    SHIELDS AJ, 1995, PHYS REV B, V52, P841

    SHIELDS AJ, 1996, SEMICOND SCI TECH, V11, P890

    STEBE B, 1998, PHYS REV B, V58, P9926

    SURIS RA, 2001, PHYS STATUS SOLIDI B, V227, P343

    WOJTOWICZ T, 1998, APPL PHYS LETT, V73, P1379

    YOON HW, 1996, SOLID STATE COMMUN, V100, P743

    ZHU J, 2003, PHYS REV LETT, V90

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

  • There is no available fulltext. Please contact the lab or the authors.

Related material