Optical studies of charged excitons in II-VI semiconductor quantum wells
Kossacki, P.; Ciulin, V.; Cibert, J.; Kutrowski, M.; Maslana, W.; Ferrand, D.; Tatarenko, S.; Wojtowicz, T.; Deveaud, B.; Gaj, J. A.
2003

Résumé

A brief review is given of optical experiments related to the creation and recombination of charged excitons. The fundamental parameters of these states are discussed. This includes their energies, optical transition probabilities, and characteristic times of their formation, thermalisation, and decay. A model of free three-particle charged exciton is shown to describe correctly the results of many experiments. The applicability range of the model is limited by many body effects at higher carrier concentrations and by localisation, typically due to disorder.

Détails

Titre Optical studies of charged excitons in II-VI semiconductor quantum wells
Auteur(s) Kossacki, P. ; Ciulin, V. ; Cibert, J. ; Kutrowski, M. ; Maslana, W. ; Ferrand, D. ; Tatarenko, S. ; Wojtowicz, T. ; Deveaud, B. ; Gaj, J. A.
Publié dans Physics of Semiconductors 2002, Proceedings
Série Institute of Physics Conference Series
Volume 171
Pages 133-143
Date 2003
Editeur Iop Publishing Ltd
ISSN 0951-3248
Mots-clés (libres)
Note Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland. Swiss Fed Inst Technol, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland. Lab Spectromet Phys, F-38402 St Martin Dheres, France. Polish Acad Sci, Inst Phys, Warsaw, Poland. Kossacki, P, Univ Warsaw, Inst Expt Phys, Hoza 69, PL-00681 Warsaw, Poland.
ISI Document Delivery No.: BAN32
Cited Reference Count: 45
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Date de création de la notice 2007-08-31

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