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Electrolummescence of asymmetric coupled GaAs/AlGaAs V-groove quantum wires

We have studied systems of asymmetric coupled GaAs V-groove quantum wires, in which the electrons and holes are injected into different wires. Our experimental results indicate efficient electron and hole tunneling, despite a 7 nm thick AlGaAs tunnel barrier. Temperature dependent electroluminescence exhibit clear effects of tunneling up to room temperature but cannot distinguish electron/hole tunneling from exciton tunneling.

    Note:

    Swiss Fed Inst Technol, Inst Quantum Elect & Photon, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland. Linkoping Univ, Dept Phys, Linkoping, Sweden. Karlsson, KF, Swiss Fed Inst Technol, Inst Quantum Elect & Photon, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland.

    ISI Document Delivery No.: BAN50

    Times Cited: 0

    Cited Reference Count: 7

    Cited References:

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    Record created on 2007-08-31, modified on 2016-08-08

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