Electrolummescence of asymmetric coupled GaAs/AlGaAs V-groove quantum wires

We have studied systems of asymmetric coupled GaAs V-groove quantum wires, in which the electrons and holes are injected into different wires. Our experimental results indicate efficient electron and hole tunneling, despite a 7 nm thick AlGaAs tunnel barrier. Temperature dependent electroluminescence exhibit clear effects of tunneling up to room temperature but cannot distinguish electron/hole tunneling from exciton tunneling.


Published in:
Compound Semiconductors 2002, 174, 183-186
Year:
2003
Publisher:
Iop Publishing Ltd
ISSN:
0951-3248
Note:
Swiss Fed Inst Technol, Inst Quantum Elect & Photon, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland. Linkoping Univ, Dept Phys, Linkoping, Sweden. Karlsson, KF, Swiss Fed Inst Technol, Inst Quantum Elect & Photon, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: BAN50
Times Cited: 0
Cited Reference Count: 7
Cited References:
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Article
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 Record created 2007-08-31, last modified 2018-03-17


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