Infoscience

Journal article

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 mu m

The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 mum were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but saturate faster as the excitation is increased, due to the lower density of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. (C) 2002 American Institute of Physics.

    Keywords: MOLECULAR-BEAM EPITAXY ; ALLOYS ; LASER ; GAAS

    Note:

    Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland. Infineon Technol, Corp Res, D-81730 Munich, Germany. Markus, A, Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland.

    ISI Document Delivery No.: 517LW

    Times Cited: 18

    Cited Reference Count: 20

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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