Towards a room temperature polariton amplifier

We engineer a semiconductor microcavity through an appropriate choice of geometry and materials in order to maximise the exciton-photon coupling. The polaritonic nonlinearities in such devices survive at high temperatures and high excitation densities. We measure parametric polariton amplification up to 220 K in CdTe microcavities and up to 120 K in GaAs ones. The amplification is also outstanding, reaching as much as 5000 at low temperature. The experimental observations suggest that the operating temperature can be further improved by optimising the present technology, so that a real-world polariton amplifier appears no more as a mirage.


Published in:
Physica Status Solidi a-Applied Research, 190, 2, 315-319
Year:
2002
ISSN:
0031-8965
Keywords:
Note:
Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland. CNRS, L2M, F-92225 Bagneux, France. Univ Grenoble 1, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France. Univ Cagliari, Dipartimento Fis, Cagliari, Italy. Univ Cagliari, INFM, Cagliari, Italy. Saba, M, Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 552MB
Times Cited: 4
Cited Reference Count: 20
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