Level repulsion of localised excitons observed in near-field photoluminescence spectra
GaAs/GaAlAs quantum wires grown by modulated flow rate metalorganic chemical vapour deposition were investigated by spatially resolved photoluminescence spectroscopy using a scanning near-field optical microscope. It was found that the wires decompose into a series of regions that emit luminescence of varying intensity. The spectra of these regions feature several narrow emission lines, which means that there is a series of more or less localised exciton states inside each region. It is expected that these exciton states are very close to each other and are correlated, which leads to level repulsion. The mean autocorrelation function taken from a series of near-field spectra clearly reveals this level repulsion, which amounts to roughly 2 meV.
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Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland. Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan. Staehli, JL, Swiss Fed Inst Technol, Dept Phys, PH-Ecublens, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 553CB
Times Cited: 9
Cited Reference Count: 6
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Record created on 2007-08-31, modified on 2016-08-08