000111200 001__ 111200
000111200 005__ 20180317094524.0
000111200 0247_ $$2doi$$a10.1109/JQE.2002.1005418
000111200 022__ $$a0018-9197
000111200 02470 $$2DAR$$a582
000111200 02470 $$2ISI$$a000175929900017
000111200 037__ $$aARTICLE
000111200 245__ $$aHot phonons and Auger related carrier heating in semiconductor optical amplifiers
000111200 260__ $$c2002
000111200 269__ $$a2002
000111200 336__ $$aJournal Articles
000111200 500__ $$aSwiss Fed Inst Technol Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland. Alcatel Res & Innovat, F-91461 Marcoussis, France. Fehr, JN, Swiss Fed Inst Technol Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland.
000111200 500__ $$aISI Document Delivery No.: 557VU
000111200 500__ $$aTimes Cited: 6
000111200 500__ $$aCited Reference Count: 28
000111200 500__ $$aCited References: 
000111200 500__ $$a     AGRAWAL GP, 1986, LONG WAVELENGTH SEMI
000111200 500__ $$a     ALGARTE ACS, 1996, PHYS REV B, V54, P11311
000111200 500__ $$a     ASHCROFT NW, 1976, SOLID STATE PHYS, P458
000111200 500__ $$a     BLOOD P, 1988, APPL PHYS LETT, V52, P599
000111200 500__ $$a     BLOOD P, 1989, APPL PHYS LETT, V55, P1167
000111200 500__ $$a     DAI Z, 1997, IEEE J QUANTUM ELECT, V33, P2240
000111200 500__ $$a     EMERY JY, 1997, ELECTRON LETT, V33, P1083
000111200 500__ $$a     FANG WCW, 1995, IEEE J SEL TOP QUANT, V1, P117
000111200 500__ $$a     FEHR JN, 2001, APPL PHYS LETT, V78, P4079
000111200 500__ $$a     GIRARDIN F, 1997, IEEE J SEL TOP QUANT, V3, P461
000111200 500__ $$a     HALL KL, 1992, APPL PHYS LETT, V61, P2512
000111200 500__ $$a     HALL KL, 1994, OPT COMMUN, V111, P589
000111200 500__ $$a     KASH JA, 1985, PHYS REV LETT, V54, P2151
000111200 500__ $$a     MORK J, 1996, J OPT SOC AM B, V13, P1803
000111200 500__ $$a     NIDO M, 1994, APPL PHYS LETT, V64, P681
000111200 500__ $$a     PLEUMEEKERS JL, 1998, IEEE J QUANTUM ELECT, V34, P879
000111200 500__ $$a     POTZ W, 1983, PHYS REV B, V28, P7040
000111200 500__ $$a     SELBMANN PE, 1999, P 24 INT C PHYS SEM
000111200 500__ $$a     SERMAGE B, 1986, IEEE J QUANTUM ELECT, V22, P774
000111200 500__ $$a     SHAH J, 1996, SER SPRINGER SOLID S, V115
000111200 500__ $$a     SUGIMURA A, 1983, IEEE J QUANTUM ELECT, V19, P930
000111200 500__ $$a     SWEENEY SJ, 2000, C LAS EL OPT OSA OPT, P391
000111200 500__ $$a     TITKOV AN, 1981, J LUMIN, V24, P697
000111200 500__ $$a     TSAI CY, 1996, IEEE J QUANTUM ELECT, V32, P201
000111200 500__ $$a     VONDERLINDE D, 1980, PHYS REV LETT, V44, P1505
000111200 500__ $$a     WANG G, 1993, IEEE PHOTONIC TECH L, V5, P642
000111200 500__ $$a     WANG J, 1997, IEEE J QUANTUM ELECT, V33, P1350
000111200 500__ $$a     WINTNER E, 1984, APPL PHYS LETT, V44, P999
000111200 520__ $$aWe have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature. The direct correlation of the temperature increase with the carrier density suggests Auger recombination as the main heating mechanism. We have developed a model based on rate equations for the total energy density of electrons, holes, and longitudinal-optical phonons. This model allows us to explain the thermal behavior of carrier and phonon populations. The strong heating observed is shown to be due to the combined effects of hot phonon and Auger recombination in the valence band. We also observe an evolution of the Auger process, as the density is increased, from cubic to square dependence with coefficients C-3 = 0.9 10(-28) cm(6) s(-1) and C-2 = 2.4 10(-10) cm(3) s(-1). This change is explained by the hole quasi-Fermi level entering the valence band.
000111200 6531_ $$ahot carriers
000111200 6531_ $$aphonons
000111200 6531_ $$aphotoluminescence
000111200 6531_ $$asemiconductor optical
000111200 6531_ $$aamplifier
000111200 6531_ $$aspontaneous emission
000111200 6531_ $$aQUANTUM WELL LASERS
000111200 6531_ $$aSPONTANEOUS EMISSION
000111200 6531_ $$aTEMPERATURE-DEPENDENCE
000111200 6531_ $$aNONLINEAR GAIN
000111200 6531_ $$aLO PHONONS
000111200 6531_ $$aDYNAMICS
000111200 6531_ $$aINGAASP
000111200 6531_ $$aGAAS
000111200 6531_ $$aSPONTANEOUS EMISSION
000111200 700__ $$aFehr, J. N.
000111200 700__ $$0240820$$aDupertuis, M. A.$$g105021
000111200 700__ $$aHessler, T. P.
000111200 700__ $$0241445$$aKappei, L.$$g130078
000111200 700__ $$0241799$$aMarti, D.$$g102520
000111200 700__ $$0241443$$aSalleras, F.$$g139518
000111200 700__ $$aNomura, M. S.
000111200 700__ $$0241178$$aDeveaud, B.$$g104954
000111200 700__ $$aEmery, J. Y.
000111200 700__ $$aDagens, B.
000111200 773__ $$j38$$k6$$q674-681$$tIeee Journal of Quantum Electronics
000111200 909CO $$ooai:infoscience.tind.io:111200$$particle$$pSB
000111200 909C0 $$0252003$$pLOEQ$$xU10156
000111200 937__ $$aLOEQ-ARTICLE-2002-017
000111200 970__ $$a32/LOEQ
000111200 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000111200 980__ $$aARTICLE