Hot phonons and Auger related carrier heating in semiconductor optical amplifiers

We have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature. The direct correlation of the temperature increase with the carrier density suggests Auger recombination as the main heating mechanism. We have developed a model based on rate equations for the total energy density of electrons, holes, and longitudinal-optical phonons. This model allows us to explain the thermal behavior of carrier and phonon populations. The strong heating observed is shown to be due to the combined effects of hot phonon and Auger recombination in the valence band. We also observe an evolution of the Auger process, as the density is increased, from cubic to square dependence with coefficients C-3 = 0.9 10(-28) cm(6) s(-1) and C-2 = 2.4 10(-10) cm(3) s(-1). This change is explained by the hole quasi-Fermi level entering the valence band.


Published in:
Ieee Journal of Quantum Electronics, 38, 6, 674-681
Year:
2002
ISSN:
0018-9197
Keywords:
Note:
Swiss Fed Inst Technol Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland. Alcatel Res & Innovat, F-91461 Marcoussis, France. Fehr, JN, Swiss Fed Inst Technol Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 557VU
Times Cited: 6
Cited Reference Count: 28
Cited References:
AGRAWAL GP, 1986, LONG WAVELENGTH SEMI
ALGARTE ACS, 1996, PHYS REV B, V54, P11311
ASHCROFT NW, 1976, SOLID STATE PHYS, P458
BLOOD P, 1988, APPL PHYS LETT, V52, P599
BLOOD P, 1989, APPL PHYS LETT, V55, P1167
DAI Z, 1997, IEEE J QUANTUM ELECT, V33, P2240
EMERY JY, 1997, ELECTRON LETT, V33, P1083
FANG WCW, 1995, IEEE J SEL TOP QUANT, V1, P117
FEHR JN, 2001, APPL PHYS LETT, V78, P4079
GIRARDIN F, 1997, IEEE J SEL TOP QUANT, V3, P461
HALL KL, 1992, APPL PHYS LETT, V61, P2512
HALL KL, 1994, OPT COMMUN, V111, P589
KASH JA, 1985, PHYS REV LETT, V54, P2151
MORK J, 1996, J OPT SOC AM B, V13, P1803
NIDO M, 1994, APPL PHYS LETT, V64, P681
PLEUMEEKERS JL, 1998, IEEE J QUANTUM ELECT, V34, P879
POTZ W, 1983, PHYS REV B, V28, P7040
SELBMANN PE, 1999, P 24 INT C PHYS SEM
SERMAGE B, 1986, IEEE J QUANTUM ELECT, V22, P774
SHAH J, 1996, SER SPRINGER SOLID S, V115
SUGIMURA A, 1983, IEEE J QUANTUM ELECT, V19, P930
SWEENEY SJ, 2000, C LAS EL OPT OSA OPT, P391
TITKOV AN, 1981, J LUMIN, V24, P697
TSAI CY, 1996, IEEE J QUANTUM ELECT, V32, P201
VONDERLINDE D, 1980, PHYS REV LETT, V44, P1505
WANG G, 1993, IEEE PHOTONIC TECH L, V5, P642
WANG J, 1997, IEEE J QUANTUM ELECT, V33, P1350
WINTNER E, 1984, APPL PHYS LETT, V44, P999
Other identifiers:
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)