We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum efficiency of similar to 20% with an electroluminescence (EL) linewidth as narrow as 15 meV. The thermal broadening contribution to the linewidth is 6 meV due to exciton scattering with optical phonons. An analysis of the EL peak shift in a magnetic field points out the typical superlinear behavior of the excitonic binding energy for a quantum wire. (C) 2001 American Institute of Physics.
Title
Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes
Published in
Applied Physics Letters
Volume
79
Issue
9
Pages
1402-1402
Date
2001
ISSN
0003-6951
Note
Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland. Weman, H, Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 465LQ
Cited Reference Count: 1
Cited References:
WEMAN H, 2001, APPL PHYS LETT, V79, P4
BALANDIN A, 1995, PHYS REV B, V52, P8312
DASSARMA S, 2000, PHYS REV LETT, V84, P2010
GAMMON D, 1995, PHYS REV B, V51, P16785
HERMANN C, 1977, PHYS REV B, V15, P823
KAPON E, 1999, SEMICONDUCTOR LASERS, V1, CH4
KONKAR A, 1998, APPL PHYS LETT, V72, P220
MARTINET E, 1998, APPL PHYS LETT, V72, P701
NOJIMA S, 1992, PHYS REV B, V46, P2302
TANAKA T, 1994, PHYS REV B, V50, P7719
VOUILLOZ F, 1998, PHYS REV B, V57, P12378
WEMAN H, 1998, APPL PHYS LETT, V73, P2959
Record creation date
2007-08-31