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Journal article

Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes

We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum efficiency of similar to 20% with an electroluminescence (EL) linewidth as narrow as 15 meV. The thermal broadening contribution to the linewidth is 6 meV due to exciton scattering with optical phonons. An analysis of the EL peak shift in a magnetic field points out the typical superlinear behavior of the excitonic binding energy for a quantum wire. (C) 2001 American Institute of Physics.

    Keywords: CONFINEMENT

    Note:

    Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland. Weman, H, Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland.

    ISI Document Delivery No.: 465LQ

    Times Cited: 0

    Cited Reference Count: 1

    Cited References:

    WEMAN H, 2001, APPL PHYS LETT, V79, P4

    BALANDIN A, 1995, PHYS REV B, V52, P8312

    DASSARMA S, 2000, PHYS REV LETT, V84, P2010

    GAMMON D, 1995, PHYS REV B, V51, P16785

    HERMANN C, 1977, PHYS REV B, V15, P823

    KAPON E, 1999, SEMICONDUCTOR LASERS, V1, CH4

    KONKAR A, 1998, APPL PHYS LETT, V72, P220

    MARTINET E, 1998, APPL PHYS LETT, V72, P701

    NOJIMA S, 1992, PHYS REV B, V46, P2302

    TANAKA T, 1994, PHYS REV B, V50, P7719

    VOUILLOZ F, 1998, PHYS REV B, V57, P12378

    WEMAN H, 1998, APPL PHYS LETT, V73, P2959

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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