Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes

We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum efficiency of similar to 20% with an electroluminescence (EL) linewidth as narrow as 15 meV. The thermal broadening contribution to the linewidth is 6 meV due to exciton scattering with optical phonons. An analysis of the EL peak shift in a magnetic field points out the typical superlinear behavior of the excitonic binding energy for a quantum wire. (C) 2001 American Institute of Physics.


Published in:
Applied Physics Letters, 79, 9, 1402-1402
Year:
2001
ISSN:
0003-6951
Keywords:
Note:
Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland. Weman, H, Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 465LQ
Times Cited: 0
Cited Reference Count: 1
Cited References:
WEMAN H, 2001, APPL PHYS LETT, V79, P4
BALANDIN A, 1995, PHYS REV B, V52, P8312
DASSARMA S, 2000, PHYS REV LETT, V84, P2010
GAMMON D, 1995, PHYS REV B, V51, P16785
HERMANN C, 1977, PHYS REV B, V15, P823
KAPON E, 1999, SEMICONDUCTOR LASERS, V1, CH4
KONKAR A, 1998, APPL PHYS LETT, V72, P220
MARTINET E, 1998, APPL PHYS LETT, V72, P701
NOJIMA S, 1992, PHYS REV B, V46, P2302
TANAKA T, 1994, PHYS REV B, V50, P7719
VOUILLOZ F, 1998, PHYS REV B, V57, P12378
WEMAN H, 1998, APPL PHYS LETT, V73, P2959
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