Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs


Published in:
Compound Semiconductors 1999, 273-276
Year:
2000
Note:
166
Laboratories:




 Record created 2007-08-31, last modified 2018-01-28


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)