We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current densities approximate to100 A/cm(2). Maximum modal gains on the order of 5 cm(-1) are deduced for a single QD sheet.