Theory of ultrafast Rayleigh scattering in semiconductor quantum wells

The Rayleigh scattering of light at resonance with the ground state exciton transition in quantum wells is studied by means of a microscopic model. The disorder-induced localization of the exciton center-of-mass leads to characteristic features of the scattered intensity which can help understanding the outcome of secondary emission experiments. In particular, the connection between time-resolved scattering and energy-level statistics, and the enhancement of the backscattered intensity in angle-resolved measurements are discussed.


Published in:
Physica Status Solidi B-Basic Research, 221, 1, 365-371
Year:
2000
ISSN:
0370-1972
Keywords:
Note:
Humboldt Univ, Inst Phys, D-10117 Berlin, Germany. Swiss Fed Inst Technol, EPFL, Dept Phys, CH-1015 Lausanne, Switzerland. Savona, V, Humboldt Univ, Inst Phys, Hausvogteipl 5-7, D-10117 Berlin, Germany.
ISI Document Delivery No.: 362PZ
Times Cited: 1
Cited Reference Count: 28
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 Record created 2007-08-31, last modified 2018-01-28


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