In situ cathodoluminescence experiments have been performed to follow the time dependence of the UV luminescence in epitaxial lateral overgrowth GaN specimens. The decrease of the observed intensity and red-shift of the UV peak are interpreted in terms of non-radiative defect introduction and diffusion. This leads to strain relaxation of the GaN epilayer, which is initially under compressive strain. Monochromatic UV and yellow CL images show that dislocations act as efficient non-radiative recombination centres, that they are not at the origin of the yellow band and that they do not move under the electron beam.
Title
Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation
Published in
Journal of Physics-Condensed Matter
Volume
12
Issue
49
Pages
10271-10278
Date
2000
ISSN
0953-8984
Note
Univ Lille, Lab Struct & Prop Etat Solide, F-59655 Villeneuve Dascq, France. CNRS, CRHEA, F-06560 Valbonne, France. EPFL, IMO, CH-1015 Lausanne, Switzerland. Sieber, B, Univ Lille, Lab Struct & Prop Etat Solide, ESA 8008,Batiment C6, F-59655 Villeneuve Dascq, France.
ISI Document Delivery No.: 386BC
Cited Reference Count: 14
Cited References:
AURET FD, 1999, APPL PHYS LETT, V74, P407
BEAUMONT B, 1999, PHYS STATUS SOLIDI A, V176, P567
BONARD JM, 1997, PHIL MAG LETT, V76, P181
BUYANOVA IA, 1998, APPL PHYS LETT, V73, P2968
CHRISTIANSEN S, 1996, MRS INTERNET J N S R, V1
ELSNER J, 1999, MRS J INT J NITRIDE
JAIN SC, 2000, J APPL PHYS, V87, P965
LESTER SD, 1995, APPL PHYS LETT, V66, P1249
MAEDA K, 1999, PHYSICA B, V273, P134
NAKAMURA S, 1999, MRS INT J NITRIDE SE
NEU G, 1999, PHYS STATUS SOLIDI B, V216, P79
NEUGEBAUER J, 1996, APPL PHYS LETT, V69, P503
PONCE FA, 1996, APPL PHYS LETT, V68, P57
TOTH M, 1999, PHYS REV B, V59, P1575
Record creation date
2007-08-31