Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation

In situ cathodoluminescence experiments have been performed to follow the time dependence of the UV luminescence in epitaxial lateral overgrowth GaN specimens. The decrease of the observed intensity and red-shift of the UV peak are interpreted in terms of non-radiative defect introduction and diffusion. This leads to strain relaxation of the GaN epilayer, which is initially under compressive strain. Monochromatic UV and yellow CL images show that dislocations act as efficient non-radiative recombination centres, that they are not at the origin of the yellow band and that they do not move under the electron beam.


Published in:
Journal of Physics-Condensed Matter, 12, 49, 10271-10278
Year:
2000
ISSN:
0953-8984
Keywords:
Note:
Univ Lille, Lab Struct & Prop Etat Solide, F-59655 Villeneuve Dascq, France. CNRS, CRHEA, F-06560 Valbonne, France. EPFL, IMO, CH-1015 Lausanne, Switzerland. Sieber, B, Univ Lille, Lab Struct & Prop Etat Solide, ESA 8008,Batiment C6, F-59655 Villeneuve Dascq, France.
ISI Document Delivery No.: 386BC
Times Cited: 3
Cited Reference Count: 14
Cited References:
AURET FD, 1999, APPL PHYS LETT, V74, P407
BEAUMONT B, 1999, PHYS STATUS SOLIDI A, V176, P567
BONARD JM, 1997, PHIL MAG LETT, V76, P181
BUYANOVA IA, 1998, APPL PHYS LETT, V73, P2968
CHRISTIANSEN S, 1996, MRS INTERNET J N S R, V1
ELSNER J, 1999, MRS J INT J NITRIDE
JAIN SC, 2000, J APPL PHYS, V87, P965
LESTER SD, 1995, APPL PHYS LETT, V66, P1249
MAEDA K, 1999, PHYSICA B, V273, P134
NAKAMURA S, 1999, MRS INT J NITRIDE SE
NEU G, 1999, PHYS STATUS SOLIDI B, V216, P79
NEUGEBAUER J, 1996, APPL PHYS LETT, V69, P503
PONCE FA, 1996, APPL PHYS LETT, V68, P57
TOTH M, 1999, PHYS REV B, V59, P1575
Other identifiers:
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)