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Carrier-carrier interaction and fast intersubband scattering in wide GaAs quantum wells

Wide quantum wells, where the energy spacing between the first two energy levels is lower than the energy of the polar optical phonon, could represent the ideal condition to obtain a population inversion and the production of infrared lasers. On the other hand in these quantum wells the efficiency of carrier-carrier scattering is increasing with the width of the well and can produce a relatively quick relaxation of carriers in the first subband. In this work we present a detailed and systematic joint theoretical and experimental investigation considering different well width and carrier density and we conclude that in most cases the carrier-carrier scattering is sufficiently strong to forbid a significant population inversion.

    Keywords: intersubband scattering ; population inversion ; laser ; wide quantum wells ; RELAXATION

    Note:

    ECCE, IT-42019 Scandiano, RE, Italy. Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland. Rota, L, ECCE, Via Brolo Sopra 3, IT-42019 Scandiano, RE, Italy.

    ISI Document Delivery No.: BM90N

    Times Cited: 0

    Cited Reference Count: 12

    Cited References:

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    Article

    BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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