Carrier-carrier interaction and fast intersubband scattering in wide GaAs quantum wells

Wide quantum wells, where the energy spacing between the first two energy levels is lower than the energy of the polar optical phonon, could represent the ideal condition to obtain a population inversion and the production of infrared lasers. On the other hand in these quantum wells the efficiency of carrier-carrier scattering is increasing with the width of the well and can produce a relatively quick relaxation of carriers in the first subband. In this work we present a detailed and systematic joint theoretical and experimental investigation considering different well width and carrier density and we conclude that in most cases the carrier-carrier scattering is sufficiently strong to forbid a significant population inversion.


Published in:
Ultrafast Phenomena in Semiconductors, 297-2, 103-106
Year:
1999
Publisher:
Transtec Publications Ltd
ISSN:
0255-5476
Keywords:
Note:
ECCE, IT-42019 Scandiano, RE, Italy. Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland. Rota, L, ECCE, Via Brolo Sopra 3, IT-42019 Scandiano, RE, Italy.
ISI Document Delivery No.: BM90N
Times Cited: 0
Cited Reference Count: 12
Cited References:
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Article
BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


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