Arsenic induced mass transport of GaAs on V-groove GaAs substrate
1999
Details
Title
Arsenic induced mass transport of GaAs on V-groove GaAs substrate
Author(s)
Martin, D. ; Robadey, J. ; Filipowitz, F. ; Gourgon, C. ; Reinhart, F. K.
Published in
Journal of Crystal Growth
Volume
202
Issue
3
Pages
183-186
Date
1999
Note
Swiss Fed Inst Technol, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. Martin, D, Swiss Fed Inst Technol, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. ISI Document Delivery No.: 198DB Cited References: BURKE TM, 1997, J CRYST GROWTH 1, V175, P416 KUNZEL H, 1997, J CRYST GROWTH 1, V175, P411 MARTI U, 1991, MICROELECTRON ENG, V13, P391 PETIT EJ, 1994, J VAC SCI TECHNOL B, V12, P547 ROBADEY J, 1997, IEEE PHOTON TECHNOL, V9 NR 5 TC 2 PU ELSEVIER SCIENCE BV PI AMSTERDAM PA PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS SN 0022-0248
Other identifier(s)
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Laboratories
LOEQ
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2007-08-31