Arsenic induced mass transport of GaAs on V-groove GaAs substrate


Published in:
J. Cryst. Growth, 202, 3, 183-186
Year:
1999
Note:
Swiss Fed Inst Technol, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. Martin, D, Swiss Fed Inst Technol, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. ISI Document Delivery No.: 198DB Cited References: BURKE TM, 1997, J CRYST GROWTH 1, V175, P416 KUNZEL H, 1997, J CRYST GROWTH 1, V175, P411 MARTI U, 1991, MICROELECTRON ENG, V13, P391 PETIT EJ, 1994, J VAC SCI TECHNOL B, V12, P547 ROBADEY J, 1997, IEEE PHOTON TECHNOL, V9 NR 5 TC 2 PU ELSEVIER SCIENCE BV PI AMSTERDAM PA PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS SN 0022-0248
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 Record created 2007-08-31, last modified 2018-03-17


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