Observation of dark-pulse formation in gain-clamped semiconductor optical amplifiers by cross-gain modulation

We have measured the ultrafast simultaneous cross-gain and laser mode dynamics in a gain-clamped semiconductor amplifier perturbed by an intense detuned 150 fs pump pulse. Besides relaxation oscillations, we demonstrate the instantaneous formation of a dark pulse in the laser mode that repeats itself with a period given by the cavity round-trip time. The dark pulse sequence subsequently decays into two-mode beating and is shown to weakly cross modulate the amplifier gain. To describe dark-pulse formation a time- and spatially dependent model based on rate equations is necessary. The experimental results are in reasonable agreement with numerical simulations. (C) 1999 American Institute of Physics. [S0003-6951(99)02750-3].


Published in:
Applied Physics Letters, 75, 24, 3760-3762
Year:
1999
ISSN:
0003-6951
Note:
Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland. Alcatel Corp Res Ctr, Grp Interet Econ, OPTO, F-91460 Marcoussis, France. Selbmann, PE, Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 265KF
Times Cited: 7
Cited Reference Count: 7
Cited References:
BACHMANN M, 1996, ELECTRON LETT, V32, P2076
CHOW WW, 1994, SEMICONDUCTOR LASER
HESSLER T, 1997, QUANTUM SEMICL OPT, V9, P675
KAUER M, 1998, APPL PHYS LETT, V72, P1626
PLEUMEEKERS JL, 1998, IEEE J QUANTUM ELECT, V34, P879
SELBMANN PE, 1999, TRENDS OPTICS PHOTON, V28, P130
SIMON JC, 1994, ELECTRON LETT, V30, P49
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 Record created 2007-08-31, last modified 2018-03-17


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