000111036 001__ 111036
000111036 005__ 20181203020924.0
000111036 0247_ $$2doi$$a10.1063/1.368193
000111036 022__ $$a0021-8979
000111036 02470 $$2ISI$$a000075294600016
000111036 037__ $$aARTICLE
000111036 245__ $$aCombined transmission electron microscopy and cathodoluminescence studies of degradation in electron-beam-pumped Zn1-xCdxSe/ZnSe blue-green lasers
000111036 260__ $$c1998
000111036 269__ $$a1998
000111036 336__ $$aJournal Articles
000111036 500__ $$aEcole Polytech Fed Lausanne, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. INFM, Lab Nazl TASC, Area Ricerca, I-34012 Trieste, Italy. CEA, LETI, Dept Optron, F-34054 Grenoble, France. CNR, ICMAT, I-00016 Monterotondo, Italy. Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy. Bonard, JM, Ecole Polytech Fed Lausanne, Dept Phys, Inst Phys Expt, CH-1015 Lausanne, Switzerland.
000111036 500__ $$aISI Document Delivery No.: 108YT
000111036 500__ $$aTimes Cited: 6
000111036 500__ $$aCited Reference Count: 41
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000111036 520__ $$aWe explored degradation in electron-beam-pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence (CL) measurements in a scanning electron microscope with transmission electron microscopy. The rate of degradation, measured as the decrease of the emitted CL intensity under electron bombardment, depends critically on the threading dislocation density and on the strain in the quantum well. Degradation occurs via the formation of dark spot defects, which are related to bombardment-induced networks of dislocation loops in the quantum well. These degradation defects often initiate where threading dislocations cross the quantum well. We propose a self-supporting dislocation climb mechanism activated by nonradiative recombination to explain the formation and propagation of the degradation defects. (C) 1998 American Institute of Physics.
000111036 6531_ $$aENHANCED DEFECT REACTIONS
000111036 6531_ $$aGAALAS-GAAS LASERS
000111036 6531_ $$aDARK LINE DEFECTS
000111036 6531_ $$aLIGHT
000111036 6531_ $$aEMITTERS
000111036 6531_ $$aDISLOCATION LOOPS
000111036 6531_ $$aSEMICONDUCTORS
000111036 6531_ $$aDIODE
000111036 6531_ $$aZNSE
000111036 700__ $$aBonard, J. M.
000111036 700__ $$0240830$$aGaniere, J. D.$$g105197
000111036 700__ $$aVanzetti, L.
000111036 700__ $$aPaggel, J. J.
000111036 700__ $$aSorba, L.
000111036 700__ $$aFranciosi, A.
000111036 773__ $$j84$$k3$$q1263-1273$$tJournal of Applied Physics
000111036 909C0 $$0252003$$pLOEQ$$xU10156
000111036 909CO $$ooai:infoscience.tind.io:111036$$pSB$$particle
000111036 937__ $$aLOEQ-ARTICLE-1998-030
000111036 970__ $$a115/LOEQ
000111036 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000111036 980__ $$aARTICLE