Infoscience

Journal article

Combined transmission electron microscopy and cathodoluminescence studies of degradation in electron-beam-pumped Zn1-xCdxSe/ZnSe blue-green lasers

We explored degradation in electron-beam-pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence (CL) measurements in a scanning electron microscope with transmission electron microscopy. The rate of degradation, measured as the decrease of the emitted CL intensity under electron bombardment, depends critically on the threading dislocation density and on the strain in the quantum well. Degradation occurs via the formation of dark spot defects, which are related to bombardment-induced networks of dislocation loops in the quantum well. These degradation defects often initiate where threading dislocations cross the quantum well. We propose a self-supporting dislocation climb mechanism activated by nonradiative recombination to explain the formation and propagation of the degradation defects. (C) 1998 American Institute of Physics.

    Keywords: ENHANCED DEFECT REACTIONS ; GAALAS-GAAS LASERS ; DARK LINE DEFECTS ; LIGHT ; EMITTERS ; DISLOCATION LOOPS ; SEMICONDUCTORS ; DIODE ; ZNSE

    Note:

    Ecole Polytech Fed Lausanne, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. INFM, Lab Nazl TASC, Area Ricerca, I-34012 Trieste, Italy. CEA, LETI, Dept Optron, F-34054 Grenoble, France. CNR, ICMAT, I-00016 Monterotondo, Italy. Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy. Bonard, JM, Ecole Polytech Fed Lausanne, Dept Phys, Inst Phys Expt, CH-1015 Lausanne, Switzerland.

    ISI Document Delivery No.: 108YT

    Times Cited: 6

    Cited Reference Count: 41

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    Record created on 2007-08-31, modified on 2016-08-08

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