000111031 001__ 111031
000111031 005__ 20190616104631.0
000111031 0247_ $$2doi$$a10.1142/S0218625X98001055
000111031 022__ $$a0218-625X
000111031 02470 $$2ISI$$a000075488600005
000111031 037__ $$aARTICLE
000111031 245__ $$aZnSe growth on lattice-matched InxGa1-xAs substrates
000111031 260__ $$c1998
000111031 269__ $$a1998
000111031 336__ $$aJournal Articles
000111031 500__ $$aINFM, Lab Nazl TASC, I-34012 Trieste, Italy. Univ Lecce, Dipartimento Sci Mat, I-73100 Lecce, Italy. Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Dept Phys, CH-1015 Lausanne, Switzerland. Heun, S, INFM, Lab Nazl TASC, Area Ricerca,Padriciano 99, I-34012 Trieste, Italy.
000111031 500__ $$aISI Document Delivery No.: 112HT
000111031 500__ $$aTimes Cited: 1
000111031 500__ $$aCited Reference Count: 37
000111031 500__ $$aCited References:
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000111031 520__ $$aThe properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values of x and ternary-layer thickness, the partial character of the strain relaxation within the III-V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.
000111031 6531_ $$aLOCAL INTERFACE COMPOSITION
000111031 6531_ $$aMOLECULAR-BEAM EPITAXY
000111031 6531_ $$aMICROGUN-PUMPED
000111031 6531_ $$aBLUE
000111031 6531_ $$aQUANTUM-WELLS
000111031 6531_ $$aBAND-GAP
000111031 6531_ $$aGAAS
000111031 6531_ $$aHETEROSTRUCTURES
000111031 6531_ $$aDENSITY
000111031 6531_ $$aSTRAIN
000111031 6531_ $$aLAYERS
000111031 700__ $$aHeun, S.
000111031 700__ $$aLantier, R.
000111031 700__ $$aPaggel, J. J.
000111031 700__ $$aSorba, L.
000111031 700__ $$aRubini, S.
000111031 700__ $$aBonanni, B.
000111031 700__ $$aFranciosi, A.
000111031 700__ $$aLomascolo, M.
000111031 700__ $$aCingolani, R.
000111031 700__ $$aBonard, J. M.
000111031 700__ $$g105197$$aGaniere, J. D.$$0240830
000111031 773__ $$j5$$tSurface Review and Letters$$k3-4$$q693-700
000111031 909C0 $$xU10156$$0252003$$pLOEQ
000111031 909CO $$pSB$$particle$$ooai:infoscience.tind.io:111031
000111031 937__ $$aLOEQ-ARTICLE-1998-025
000111031 970__ $$a109/LOEQ
000111031 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000111031 980__ $$aARTICLE