ZnSe growth on lattice-matched InxGa1-xAs substrates
Heun, S.; Lantier, R.; Paggel, J. J.; Sorba, L.; Rubini, S.; Bonanni, B.; Franciosi, A.; Lomascolo, M.; Cingolani, R.; Bonard, J. M.; Ganiere, J. D.
1998

Abstract

The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values of x and ternary-layer thickness, the partial character of the strain relaxation within the III-V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.

Details

Title ZnSe growth on lattice-matched InxGa1-xAs substrates
Author(s) Heun, S. ; Lantier, R. ; Paggel, J. J. ; Sorba, L. ; Rubini, S. ; Bonanni, B. ; Franciosi, A. ; Lomascolo, M. ; Cingolani, R. ; Bonard, J. M. ; Ganiere, J. D.
Published in Surface Review and Letters
Volume 5
Issue 3-4
Pages 693-700
Date 1998
ISSN 0218-625X
Keywords
Note INFM, Lab Nazl TASC, I-34012 Trieste, Italy. Univ Lecce, Dipartimento Sci Mat, I-73100 Lecce, Italy. Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Dept Phys, CH-1015 Lausanne, Switzerland. Heun, S, INFM, Lab Nazl TASC, Area Ricerca,Padriciano 99, I-34012 Trieste, Italy.
ISI Document Delivery No.: 112HT
Cited Reference Count: 37
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DOI https://doi.org/10.1142/S0218625X98001055
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