Infoscience

Journal article

ZnSe growth on lattice-matched InxGa1-xAs substrates

The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values of x and ternary-layer thickness, the partial character of the strain relaxation within the III-V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.

    Keywords: LOCAL INTERFACE COMPOSITION ; MOLECULAR-BEAM EPITAXY ; MICROGUN-PUMPED ; BLUE ; QUANTUM-WELLS ; BAND-GAP ; GAAS ; HETEROSTRUCTURES ; DENSITY ; STRAIN ; LAYERS

    Note:

    INFM, Lab Nazl TASC, I-34012 Trieste, Italy. Univ Lecce, Dipartimento Sci Mat, I-73100 Lecce, Italy. Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Dept Phys, CH-1015 Lausanne, Switzerland. Heun, S, INFM, Lab Nazl TASC, Area Ricerca,Padriciano 99, I-34012 Trieste, Italy.

    ISI Document Delivery No.: 112HT

    Times Cited: 1

    Cited Reference Count: 37

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    Record created on 2007-08-31, modified on 2016-08-08

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