ZnSe growth on lattice-matched InxGa1-xAs substrates

The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values of x and ternary-layer thickness, the partial character of the strain relaxation within the III-V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.


Published in:
Surface Review and Letters, 5, 3-4, 693-700
Year:
1998
ISSN:
0218-625X
Keywords:
Note:
INFM, Lab Nazl TASC, I-34012 Trieste, Italy. Univ Lecce, Dipartimento Sci Mat, I-73100 Lecce, Italy. Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Dept Phys, CH-1015 Lausanne, Switzerland. Heun, S, INFM, Lab Nazl TASC, Area Ricerca,Padriciano 99, I-34012 Trieste, Italy.
ISI Document Delivery No.: 112HT
Times Cited: 1
Cited Reference Count: 37
Cited References:
ADACHI S, 1982, J APPL PHYS, V53, P8775
ASAI H, 1983, J APPL PHYS, V54, P2052
BATEMAN TB, 1959, J APPL PHYS, V30, P544
BONANNI A, 1995, APPL PHYS LETT, V66, P1092
BONARD JM, 1997, PHIL MAG LETT, V75, P219
BRATINA G, 1993, PHYSICA B, V185, P557
BRATINA G, 1996, J CRYST GROWTH, V159, P703
CHANDRASEKHAR M, 1977, PHYS REV B, V15, P2127
CINGOLANI R, 1995, PHYS REV B, V51, P5176
GERLICH D, 1963, J APPL PHYS, V34, P2915
GUHA S, 1992, APPL PHYS LETT, V60, P3220
GUMLICH HE, 1982, LANDOLTBORNSTEIN A, V17
GUTOWSKI J, 1990, PHYS STATUS SOLIDI A, V120, P11
HERVE D, 1995, APPL PHYS LETT, V67, P2144
HERVE D, 1995, ELECTRON LETT, V31, P459
HEUN S, UNPUB J APPL PHYS
HEUN S, 1997, APPL PHYS LETT, V70, P237
HEUN S, 1997, J VAC SCI TECHNOL B, V15, P1279
JEON H, 1990, APPL PHYS LETT, V57, P2413
KUDLEK G, 1992, J CRYST GROWTH, V117, P309
KUO LH, 1993, APPL PHYS LETT, V63, P3197
LANGER DW, 1970, PHYS REV B, V2, P4005
LIDE DR, 1995, CRC HDB CHEM PHYSIS
LOZYKOWSKI HJ, 1991, J APPL PHYS, V69, P3235
MARTIN RM, 1972, PHYS REV B, V6, P4546
MENDA K, 1988, J CRYST GROWTH, V86, P342
MILES RH, 1989, J VAC SCI TECHNOL B, V7, P753
MYHAJLENKO S, 1984, J PHYS C SOLID STATE, V17, P6477
NICOLINI R, 1994, PHYS REV LETT, V72, P294
PAUL S, 1991, J APPL PHYS, V69, P827
PETRUZZELLO J, 1988, J APPL PHYS, V63, P2299
SAITO H, 1990, J CRYST GROWTH, V101, P727
SARIAE J, 1989, JPN J APPL PHYS, V28, L108
SHAHZAD K, 1989, PHYS REV B, V39, P13016
SHIBATA N, 1988, JPN J APPL PHYS, V27, L441
WILEY JD, 1970, SOLID STATE COMMUN, V8, P1865
YU PY, 1971, PHYS REV B, V3, P340
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