Ultrathin GaAs layers embedded in AlAs: a perspective for intense short wavelength emission

Type-II GaAs/AlAs quantum-well samples grown by low-pressure metal-organic vapour-phase epitaxy consisting of 50 periods of either 2 monolayers (ML), 4 ML, 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs were under investigation. Even at room temperature dominant type-I luminescence has been observed. The peak wavelength of this emission ranges from 620 to 440 nm and is determined by the GaAs layer thickness. A comparison of the measured transition energies with model calculations applying an effective mass approach and an empirical tight-binding Green's function scheme confirmed this strong dependence. To our knowledge this is the first report on intense yellow, green, and blue luminescence from GaAs. 1998 Published by Elsevier Science B.V. All rights reserved.


Published in:
Microelectronic Engineering, 43-4, 561-565
Year:
1998
ISSN:
0167-9317
Note:
Univ Leipzig, Fac Phys, D-04103 Leipzig, Germany. Univ Leipzig, Fac Chem, D-04103 Leipzig, Germany. Swiss Fed Inst Technol, Dept Phys, PH Ecublens, CH-1015 Lausanne, Switzerland. Pietag, F, Univ Leipzig, Fac Phys, Linnestr 3-5, D-04103 Leipzig, Germany.
ISI Document Delivery No.: 118XV
Times Cited: 1
Cited Reference Count: 6
Cited References:
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MADER KA, 1992, P INT M OPT EXC CONF, P341
MADER KA, 1992, THESIS SWISS FEDERAL
MASCHKE K, 1991, PHYS REV LETT, V67, P2646
MEYNADIER MH, 1988, PHYS REV LETT, V60, P1338
MOORE KJ, 1989, SPECTROSCOPY SEMICON, P293
Laboratories:




 Record created 2007-08-31, last modified 2018-01-28


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