Infoscience

Journal article

Efficient intersubband scattering via carrier-carrier interaction in quantum wells

Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon energy, we observe that intersubband scattering is a subpicosecond process, much faster than previously measured or anticipated. Our experimental results are in perfect agreement with Monte Carlo calculations, which show that carrier-carrier interaction is responsible for the ultrafast transitions.

    Keywords: PHOTOEXCITED CARRIERS ; RELAXATION ; LUMINESCENCE ; THERMALIZATION ; SPECTROSCOPY ; TEMPERATURE ; LASER

    Note:

    Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland. Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England. Hartig, M, Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland.

    ISI Document Delivery No.: YZ785

    Times Cited: 28

    Cited Reference Count: 18

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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