Anderson and Stark localization in GaAs/(AlGa)As disordered superlattices

Differences and analogies between disorder-induced localization and electric-field-induced localization are discussed. Calculations using a tight binding model and transfer matrix method for disordered superlattices are reported. Our results indicate the existence of residual structures in the energy spectrum of the disordered superlattices, which are absent in the Stark localization case. The residual structure in the Anderson localization case can be interpreted as arising from the presence of the neighboring of quantum wells with the same width and energy levels. (C) 1998 Academic Press Limited.


Published in:
Superlattices and Microstructures, 23, 1, 9-12
Year:
1998
ISSN:
0749-6036
Keywords:
Note:
Ecole Polytech Fed Lausanne, Inst Phys Appl, PH Ecublens, CH-1015 Lausanne, Switzerland. Ecole Polytech Fed Lausanne, Inst Phys Theor, PH Ecublens, CH-1015 Lausanne, Switzerland. Univ Bari, Dipartimento Fis, I-70126 Bari, Italy. Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, PH Ecublens, CH-1015 Lausanne, Switzerland. Lorusso, GF, Ecole Polytech Fed Lausanne, Inst Phys Appl, PH Ecublens, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: ZA192
Times Cited: 0
Cited Reference Count: 8
Cited References:
ANDERSON PW, 1958, PHYS REV, V109, P1492
ASHCROFT NW, 1988, SOLID STATE PHYSICS
BLEUSE J, 1988, PHYS REV LETT, V60, P220
CAPOZZI V, 1996, SOLID STATE COMMUN, V98, P853
KOHMOTO M, 1986, PHYS REV B, V34, P5043
LORUSSO GF, 1996, PHYS REV B, V53, P1018
LORUSSO GF, 1996, SEMICOND SCI TECH, V11, P308
MENDEZ EE, 1988, PHYS REV LETT, V60, P2426
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