000111016 001__ 111016
000111016 005__ 20180317094521.0
000111016 0247_ $$2doi$$a10.1063/1.367265
000111016 022__ $$a0021-8979
000111016 02470 $$2ISI$$a000073523900029
000111016 037__ $$aARTICLE
000111016 245__ $$aLateral and cross-well transport of highly and moderately excited carriers in Si1-xGex/Si superlattices
000111016 260__ $$c1998
000111016 269__ $$a1998
000111016 336__ $$aJournal Articles
000111016 500__ $$aVilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania. Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden. Vanagas, E, Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania.
000111016 500__ $$aISI Document Delivery No.: ZM292
000111016 500__ $$aTimes Cited: 1
000111016 500__ $$aCited Reference Count: 15
000111016 500__ $$aCited References: 
000111016 500__ $$a     ABSTREITER G, 1986, 2 DIMENSIONAL SYSTEM, P130
000111016 500__ $$a     ARNDT M, 1995, APPL PHYS LETT, V67, P644
000111016 500__ $$a     BERGNER H, 1982, OPT QUANTUM ELECT, V14, P245
000111016 500__ $$a     BERGNER H, 1987, APPL PHYS A-SOLID, V43, P97
000111016 500__ $$a     BUCZKOWSKI A, 1991, J APPL PHYS, V69, P6495
000111016 500__ $$a     EICHLER HJ, 1985, LASER INDUCED DYNAMI
000111016 500__ $$a     GRILLOT PN, 1995, J APPL PHYS, V77, P3248
000111016 500__ $$a     GRIVICKAS V, 1991, J APPL PHYS, V70, P1471
000111016 500__ $$a     KOMURO S, 1983, APPL PHYS LETT, V43, P968
000111016 500__ $$a     LUKE KL, 1987, J APPL PHYS, V61, P2282
000111016 500__ $$a     OTHONOS A, 1991, PHYS REV B, V43, P6682
000111016 500__ $$a     PEOPLE R, 1986, IEEE J QUANTUM ELECT, V22, P1696
000111016 500__ $$a     RUCKMANN I, 1992, PHYS STATUS SOLIDI B, V170, P353
000111016 500__ $$a     SCHLANGENOTTO H, 1974, PHYS STATUS SOLIDI A, V21, P357
000111016 500__ $$a     YOUNG JF, 1982, PHYS REV B, V26, P2147
000111016 520__ $$aPicosecond transient reflectometry and dynamic grating techniques have been applied to investigate the perpendicular and parallel transport of optically excited carriers in strained-layer Si0.83Ge0.17/Si superlattices. We present results of the carrier ambipolar diffusivity and effective lifetime measurements in the layered structure and substrate within the 10(17)-10(20) cm(-3) density range. The combined experimental data are discussed in terms of parallel and perpendicular diffusion of carriers, interface recombination, and lattice heating. The estimated lateral and cross-well diffusion constants are 10 and 0.16 cm(2)/s at room temperature, respectively. (C) 1998 American Institute of Physics.
000111016 6531_ $$aSILICON
000111016 6531_ $$aSURFACE
000111016 6531_ $$aHETEROSTRUCTURES
000111016 6531_ $$aKINETICS
000111016 6531_ $$aLIFETIME
000111016 6531_ $$aBULK
000111016 700__ $$aGaleckas, A.
000111016 700__ $$aJuodkazis, S.
000111016 700__ $$aVanagas, E.
000111016 700__ $$aNetiksis, V.
000111016 700__ $$aPetrauskas, M.
000111016 700__ $$aBitz, A.
000111016 700__ $$0240869$$aStaehli, J. L.$$g106466
000111016 700__ $$aWillander, M.
000111016 773__ $$j83$$k9$$q4756-4759$$tJournal of Applied Physics
000111016 909CO $$ooai:infoscience.tind.io:111016$$particle$$pSB
000111016 909C0 $$0252003$$pLOEQ$$xU10156
000111016 937__ $$aLOEQ-ARTICLE-1998-010
000111016 970__ $$a120/LOEQ
000111016 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000111016 980__ $$aARTICLE