Journal article

Distributed feedback gain-coupled lasers based on InGaAs quantum-wire arrays

Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented, Threshold current densities in broad area lasers were measured to be as low as 160 A/cm(2), The side-mode suppression ratio at twice threshold is 35 dB. A 4-mu m rib waveguide device has a threshold of 14 mA, The patterning process for the second-order DFB grating fabricated with deep UV holography and wet-chemical etching is described.

    Keywords: quantum wire ; distributed feddback laser ; semiconductor laser ; molecular beam epitaxial growth ; SEMICONDUCTOR-LASERS ; DFB LASER


    Ibm corp,div res,zurich res lab,ch-8803 ruschlikon,switzerland. ecole polytech fed lausanne,ctr electron microscopy,ch-1015 lausanne,switzerland. Robadey, J, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,CH-1015 LAUSANNE,SWITZERLAND. Ecole polytech fed lausanne,ch-1015 lausanne,switzerland. Kiener, C, UNIV OXFORD,DEPT PHYS,CLARENDON LAB,PARKS RD,OXFORD OX1 3PU,ENGLAND. ISI Document Delivery No.: UN207 Cited References: ACHTENHAGEN M, 1995, ELECTRON LETT, V31, P386 ACHTENHAGEN M, 1996, ELECTRON LETT, V32, P334 DAVID K, 1990, ELECTRON LETT, V26, P238 KOGELNIK H, 1972, J APPL PHYS, V43, P2327 LI GP, 1995, P SOC PHOTO-OPT INS, V2402, P76 LUO Y, 1990, APPL PHYS LETT, V56, P1620 LUO Y, 1991, APPL PHYS LETT, V59, P37 MARTI U, 1991, AM VAC SOC C P, V227, P80 NAKANO Y, 1989, APPL PHYS LETT, V55, P1606 ORTH A, 1995, ELECTRON LETT, V31, P457 PFISTER M, 1995, APPL PHYS LETT, V67, P1459 ROBADEY J, 1994, HELV PHYS ACTA, V67, P773 ROBADEY J, 1995, NUOVO CIMENTO, V17, P1687 TSANG WT, 1993, IEEE PHOTONIC TECH L, V5, P987 WALTHER M, 1993, APPL PHYS LETT, V62, P2170 NR 15 TC 6 PU IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC PI NEW YORK PA 345 E 47TH ST, NEW YORK, NY 10017-2394 SN 1041-1135 Sp. Iss. SI


    Record created on 2007-08-31, modified on 2016-08-08


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