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Intersubband scattering rates in GaAs quantum wells under selective and resonant excitation, measured by femtosecond luminescence

Using luminescence upconversion with 100 fs resolution, we have investigated the intersubband scattering of electrons in GaAs quantum wells (QWs). The energy separations between the first and second confined electron subband (E(12)) were more or less than the LO phonon energy (E(LO)) In narrow QWs (E(12) > E(LO)) the intrinsic LO phonon scattering rate is found to be 1.6 x 10(12) s(-1). A Monte Carlo simulation allows us to reproduce the experimental data with high accuracy. In wide QWs (E(12) < E(LO)) We find a very fast thermalization of the carrier population in the QW within times shorter than 300 fs. The intersubband relaxation rate for electrons in the n = 2 subband can be estimated to be shorter than 1.5 ps. (C) 1997 Academic Press Limited

    Keywords: femtosecond time resolved spectroscopy ; phonon emission ; carrier-carrier scattering ; RELAXATION ; DYNAMICS ; SPECTROSCOPY ; ELECTRONS ; CARRIER ; CAPTURE

    Note:

    Univ oxford,clarendon lab,dept phys,oxford ox1 3pu,england. Hartig, M, SWISS FED INST TECHNOL,LAB OPTOELECTRON QUANT,CH-1015 LAUSANNE,SWITZERLAND.

    ISI Document Delivery No.: WF193

    Times Cited: 2

    Cited Reference Count: 18

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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