Gain coupled DFB lasers with active layer grown on a corrugated substrate by molecular beam epitaxy

Using in situ hydrogen desorption before the growth of the 12nm thick active InGaAs layer over V-grooves, operation of gain coupled DFB lasers at 989nm is achieved al room temperature. As-cleaved lasers, 600 mu m long, have threshold current densities as low as 250A/cm(2) and typical sidemode suppression ratios of 40dB.


Published in:
Electronics Letters, 33, 4, 297-298
Year:
1997
Keywords:
Note:
Ecole polytech fed lausanne,ctr electron microscopy,swiss fed inst technol,ch-1015 lausanne,switzerland. Robadey, J, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,SWISS FED INST TECHNOL,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: WT997
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ROBADEY J, 1997, IEEE PHOTONIC TECH L, V9, P5 NR 6 TC 2 PU IEE-INST ELEC ENG PI HERTFORD PA MICHAEL FARADAY HOUSE SIX HILLS WAY STEVENAGE, HERTFORD, ENGLAND SG1 2AY SN 0013-5194
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


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