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Journal article

Gain coupled DFB lasers with active layer grown on a corrugated substrate by molecular beam epitaxy

Using in situ hydrogen desorption before the growth of the 12nm thick active InGaAs layer over V-grooves, operation of gain coupled DFB lasers at 989nm is achieved al room temperature. As-cleaved lasers, 600 mu m long, have threshold current densities as low as 250A/cm(2) and typical sidemode suppression ratios of 40dB.

    Keywords: distributed feedback lasers ; gallium indium arsenide ; molecular beam ; epitaxial growth ; GAAS

    Note:

    Ecole polytech fed lausanne,ctr electron microscopy,swiss fed inst technol,ch-1015 lausanne,switzerland. Robadey, J, ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,SWISS FED INST TECHNOL,CH-1015 LAUSANNE,SWITZERLAND.

    ISI Document Delivery No.: WT997

    Cited References:

    CHOCKETTE DK, 1993, J APPL PHYS, V73, P2035

    MARTI U, 1991, AM VAC SOC C P, V227, P80

    MORISHITA Y, 1995, JPN J APPL PHYS 2, V34, L397

    NAKANO Y, 1989, APPL PHYS LETT, V55, P1606

    PETIT EJ, 1994, J VAC SCI TECHNOL B, V12, P547

    ROBADEY J, 1997, IEEE PHOTONIC TECH L, V9, P5 NR 6 TC 2 PU IEE-INST ELEC ENG PI HERTFORD PA MICHAEL FARADAY HOUSE SIX HILLS WAY STEVENAGE, HERTFORD, ENGLAND SG1 2AY SN 0013-5194

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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