Infoscience

Journal article

Role of hole localization in the optical singularities of a two-dimensional electron gas studied by time-resolved photoluminescence

The coexistence of localized and free holes in modulation doped InGaAs/InP quantum wells, which show Fermi edge singularities in the cw photoluminescence and excitation spectra, has been determined by picosecond time-resolved luminescence spectroscopy. A long-lived peak at the tow-energy side of the emission spectrum is observed at 5 K and weak excitation. The peak, which vanishes on either increasing the temperature at similar to 30 K or increasing the excitation density, is attributed to recombination of free electrons with localized holes. The simultaneous presence of free and localized holes explains the lineshapes observed in cw measurements and the presence of Fermi edge singularities.

    Keywords: FERMI-EDGE SINGULARITY ; SEMICONDUCTOR QUANTUM-WELLS ; DOPED GAAS ; SPECTRA ; RELAXATION ; CARRIER ; DENSITY

    Note:

    Univ autonoma,dept fis mat c4,e-28049 canto blanco,madrid,spain. univ stuttgart,inst phys,d-70550 stuttgart,germany. ecole polytech fed lausanne,imo,swiss fed inst technol,ch-1015 lausanne,switzerland.

    ISI Document Delivery No.: XQ214

    Times Cited: 0

    Cited Reference Count: 21

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    Reference

    Record created on 2007-08-31, modified on 2016-08-08

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