Direct observation in the temporal domain of relaxation oscillations in a semiconductor laser

Pump and Probe measurements with femtosecond pulses are performed on a Gain-Clamped Semiconductor Optical Amplifier (a special laser structure). The relaxation oscillations of the carriers density are observed directly in the time domain, Reasonable values of the differential gain and the nonlinear gain factors are extracted from the current dependence of the oscillations.


Published in:
Physica Status Solidi B-Basic Research, 204, 1, 574-576
Year:
1997
ISSN:
0370-1972
Keywords:
Note:
Alcatel alsthom rech, f-91460 marcoussis, france. univ oxford, clarendon lab, dept phys, oxford ox1 3pu, england. Hessler, T, SWISS FED INST TECHNOL, IMO, DEPT PHYS, CH-1015 LAUSANNE, SWITZERLAND.
ISI Document Delivery No.: YJ654
Times Cited: 0
Cited Reference Count: 6
Cited References:
AGRAWAL GP, 1986, LONG WAVE LENGTH SEM
ASADA M, 1985, IEEE J QUANTUM ELECT, V21, P434
BACHMANN M, 1996, ELECTRON LETT, V32, P2076
GRABMAIER A, 1991, APPL PHYS LETT, V59, P3025
RALSTON JD, 1993, IEEE J QUANTUM ELECT, V29, P1648
SU CB, 1992, IEEE J QUANTUM ELECT, V28, P118
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 Record created 2007-08-31, last modified 2018-03-17


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