Efficient intersubband scattering via carrier-carrier interaction

Using femtosecond resonant luminescence, we have measured the intersubband scattering rate of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing be tween the first two electron subbands is smaller than the LO phonon energy, we observe that intersubband scattering is a subpicosecond process, much faster than previously measured or anticipated. Our experimental results are in perfect agreement with Monte Carlo calculations, which show that carrier-carrier interaction is responsible for the ultrafast transitions.


Published in:
Physica Status Solidi B-Basic Research, 204, 1, 159-161
Year:
1997
ISSN:
0370-1972
Keywords:
Note:
Univ oxford, clarendon lab, oxford ox1 3pu, england. Hartig, M, SWISS FED INST TECHNOL, DEPT PHYS, IMO, CH-1015 LAUSANNE, SWITZERLAND.
ISI Document Delivery No.: YJ654
Times Cited: 3
Cited Reference Count: 6
Cited References:
GOODNICK SM, 1988, PHYS REV B, V37, P2578
HARTIG M, 1996, PHYS REV B, V54, P14269
HEYMAN JN, 1995, PHYS REV LETT, V74, P2682
LEVENSON JA, 1989, SOLID STATE ELECTRON, V32, P1869
ROTA L, 1993, PHYS REV B, V47, P4226
THATAM MC, 1989, PHYS REV LETT, V63, P1637
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


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