Inhomogeneous strain relaxation and detect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy (vol 78, pg 229, 1995)
1996
Details
Title
Inhomogeneous strain relaxation and detect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy (vol 78, pg 229, 1995)
Author(s)
Lovergine, N. ; Liaci, F. ; Ganiere, J. D. ; Leo, G. ; Drigo, A. V. ; Romanto, F. ; Mancini, A. M. ; Vasanelli, L.
Published in
Journal of Applied Physics
Volume
79
Issue
1
Pages
562-562
Date
1996
ISSN
0021-8979
Note
Infm lecce,unita gnsm,i-73100 lecce,italy. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. cnr,ime,inst mat elettron,i-73100 lecce,italy. univ padua,dipartimento fis g galilei,i-35100 padua,italy. infm padova,unita gnsm,i-35100 padua,italy. Lovergine, N, UNIV LECCE,DIPARTIMENTO SCI MAT,VIA ARNESANO,I-73100 LECCE,ITALY.
ISI Document Delivery No.: TN211
Cited Reference Count: 1
Cited References:
LOVERGINE N, 1995, J APPL PHYS, V78, P229
ISI Document Delivery No.: TN211
Cited Reference Count: 1
Cited References:
LOVERGINE N, 1995, J APPL PHYS, V78, P229
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Laboratories
LOEQ
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
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Work produced at EPFL
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Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2007-08-31