Inhomogeneous strain relaxation and detect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy (vol 78, pg 229, 1995)


Published in:
Journal of Applied Physics, 79, 1, 562-562
Year:
1996
ISSN:
0021-8979
Note:
Infm lecce,unita gnsm,i-73100 lecce,italy. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. cnr,ime,inst mat elettron,i-73100 lecce,italy. univ padua,dipartimento fis g galilei,i-35100 padua,italy. infm padova,unita gnsm,i-35100 padua,italy. Lovergine, N, UNIV LECCE,DIPARTIMENTO SCI MAT,VIA ARNESANO,I-73100 LECCE,ITALY.
ISI Document Delivery No.: TN211
Times Cited: 0
Cited Reference Count: 1
Cited References:
LOVERGINE N, 1995, J APPL PHYS, V78, P229
Laboratories:




 Record created 2007-08-31, last modified 2018-03-17


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