Infoscience

Journal article

Resonant Raman scattering from phonons in GaAs/(GaAs)(m)(AlAs)(n) quantum wire structures

Raman spectroscopy has been used to measure phonons in GaAs v-groove quantum wire structures containing (001) and (111) GaAs/AlAs superlattice barrier regions. Resonance enhancement permits the identification of modes in different regions of the structure, and the measured phonon frequencies provide structural information which shows clear evidence of GaAs migration during growth from (001) surfaces into the grooves. Confined and interface phonons with large in-(111) plane wavevectors are observed. (C) 1996 American Institute of Physics.

    Keywords: INTERFACE

    Note:

    Ecole polytech fed lausanne,inst microelectr,ch-1015 lausanne,switzerland. Maciel, AC, UNIV OXFORD,DEPT PHYS,CLARENDON LAB,PARKS RD,OXFORD OX1 3PU,ENGLAND.

    ISI Document Delivery No.: TZ291

    Cited References:

    FASOL G, 1988, PHYS REV B, V38, P6056

    GANT TA, 1989, PHYS REV B, V39, P1696

    GRUNDMANN M, 1994, PHYS REV B, V50, P14187

    KAPON E, 1989, PHYS REV LETT, V63, P430

    KIENER C, 1995, APPL PHYS LETT, V67, P2851

    KNIPP PA, 1992, PHYS REV B, V45, P9091

    MACIEL AC, 1995, APPL PHYS LETT, V66, P3039

    PFISTER M, 1994, APPL PHYS LETT, V65, P1168

    POPOVIC ZV, 1990, PHYS REV B, V41, P5094

    RINALDI R, 1994, PHYS REV LETT, V73, P2899

    RUCKER H, 1991, PHYS REV B, V44, P3463

    RYAN JF, 1996, PHYS REV B, V53, R4225

    TIWARI S, 1994, APPL PHYS LETT, V64, P3536 NR 13 TC 2 PU AMER INST PHYSICS PI WOODBURY PA CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 SN 0003-6951

    Reference

    Record created on 2007-08-31, modified on 2016-08-08

Fulltext

Related material